Electrical Current Noise in Langmuir-Blodgett Thin Films


  • Syed A. Malik
  • Asim K.Ray


LB films, low-frequency noise measurement, 1/f noise, current noise spectral density


The electrical current noise of a metal-insulator-semiconductor (MIS) diode-like device fabricated by Langmuir-Blodgett (LB) technique has been studied at low to moderate dc bias current at room temperature. The result shows that the current noise spectral density SI(f) is 1/f like and the noise power was highly dependent on the bias current. The 1/f noise was not observed at zero bias. It is believed that at low bias current, the origin of noise was due to the bulk phenomena - silicon substrate and contacts whilst at higher bias current, the origin of noise in the device was solely from the LB films – surface influence.


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Author Biographies

Syed A. Malik

Department of Physics, Faculty of Science and Mathematics, Universiti Pendidikan Sultan Idris 35900 Tanjong Malim, Perak, Malaysia

Asim K.Ray

Material Research Laboratory, Wolfson Centre for Materials Processing, Brunel University, West London, Middlesex




How to Cite

Malik, S. A., & K.Ray, A. (2019). Electrical Current Noise in Langmuir-Blodgett Thin Films. Journal of Science and Mathematics Letters, 2(1), 34–29. Retrieved from https://ojs.upsi.edu.my/index.php/JSML/article/view/439